Solderless interconnect for semiconductor device assembly

ABSTRACT

Semiconductor device assemblies with solderless interconnects, and associated systems and methods are disclosed. In one embodiment, a semiconductor device assembly includes a first conductive pillar extending from a semiconductor die and a second conductive pillar extending from a substrate. The first conductive pillar may be connected to the second conductive pillar via an intermediary conductive structure formed between the first and second conductive pillars using an electroless plating solution injected therebetween. The first and second conductive pillars and the intermediary conductive structure may include copper as a common primary component, exclusive of an intermetallic compound (IMC) of a soldering process. A first sidewall surface of the first conductive pillar may be misaligned with respect to a corresponding second sidewall surface of the second conductive pillar. Such interconnects formed without IMC may improve electrical and metallurgical characteristics of the interconnects for the semiconductor device assemblies.

TECHNICAL FIELD

The present disclosure generally relates to semiconductor deviceassemblies, and more particularly relates to solderless interconnectsfor a semiconductor device assembly.

BACKGROUND

Semiconductor packages typically include a semiconductor die (e.g.,memory chip, microprocessor chip, imager chip) mounted on a substrate,encased in a protective covering. The semiconductor die may includefunctional features, such as memory cells, processor circuits, or imagerdevices, as well as bond pads electrically connected to the functionalfeatures. The bond pads can be electrically connected to correspondingconductive structures of the substrate, which may be coupled toterminals outside the protective covering such that the semiconductordie can be connected to higher level circuitry.

In some semiconductor packages, direct chip attach methods (e.g., aflip-chip bonding between the semiconductor die and the substrate) maybe used to reduce footprints of the semiconductor packages. Such directchip attach methods may include interfaces between different metallicmaterials in contact, which may form an inter-metallic compound (IMC).The IMC may degrade electrical characteristics at the interfaces (e.g.,increased resistance) or cause reliability issues due to itsmetallurgical properties (e.g., brittleness). Further, annealing stepsmay be required to facilitate bonding between different metallicmaterials, which introduces thermal stresses to the semiconductorpackage. Such thermal stresses may lead to additional issues, such ascracks propagating in a passivation layer of the semiconductor die,warpages in the semiconductor die, the substrate, or both resulting inhigh resistance at the interfaces, or the like.

BRIEF DESCRIPTION OF THE DRAWINGS

Many aspects of the present technology can be better understood withreference to the following drawings. The components in the drawings arenot necessarily to scale. Instead, emphasis is placed on illustratingclearly the principles of the present technology.

FIG. 1 illustrates cross-sectional diagrams of an exemplarysemiconductor device assembly.

FIGS. 2A through 2E illustrate a process of forming solderlessinterconnects for a semiconductor device assembly in accordance with anembodiment of the present technology.

FIGS. 3A and 3B illustrate a process of forming solderless interconnectsfor a semiconductor device assembly in accordance with an embodiment ofthe present technology.

FIG. 4 is a block diagram schematically illustrating a system includinga semiconductor device assembly configured in accordance with anembodiment of the present technology.

FIGS. 5 and 6 are flowcharts illustrating methods of forming solderlessinterconnects for a semiconductor device assembly in accordance withembodiments of the present technology.

DETAILED DESCRIPTION

Specific details of several embodiments of semiconductor deviceassemblies (“assemblies”) having solderless interconnects, andassociated systems and methods are described below. The solderlessinterconnects may provide improved electrical characteristics and areduced thermal budget during the assembly process, which in turn,improve reliability performances of the interconnects. The term“semiconductor device or die” generally refers to a solid-state devicethat includes one or more semiconductor materials. Examples ofsemiconductor devices include logic devices, memory devices,microprocessors, or diodes, among others. Such semiconductor devices mayinclude integrated circuits or components, data storage elements,processing components, and/or other features manufactured onsemiconductor substrates. Further, the term “semiconductor device ordie” can refer to a finished device or to an assembly or other structureat various stages of processing before becoming a finished device.Depending upon the context in which it is used, the term “substrate” canrefer to a wafer-level substrate or to a singulated, die-levelsubstrate. Also, a substrate may include a semiconductor wafer, apackage support substrate, an interposer, a semiconductor device or die,or the like. A person having ordinary skill in the relevant art willrecognize that suitable steps of the methods described herein can beperformed at the wafer level or at the die level.

Further, unless the context indicates otherwise, structures disclosedherein can be formed using conventional semiconductor-manufacturingtechniques. Materials can be deposited, for example, using chemicalvapor deposition, physical vapor deposition, atomic layer deposition,spin coating, plating, and/or other suitable techniques. Similarly,materials can be removed, for example, using plasma etching, wetetching, chemical-mechanical planarization, or other suitabletechniques, some of which may be combined with photolithography steps. Aperson skilled in the relevant art will also understand that thetechnology may have additional embodiments, and that the technology maybe practiced without several of the details of the embodiments describedherein with reference to FIGS. 2 through 5.

As used herein, the terms “vertical,” “lateral,” “down,” “up,” “upper,”and “lower” can refer to relative directions or positions of features inthe semiconductor device assemblies in view of the orientation shown inthe Figures. For example, “upper” or “uppermost” can refer to a featurepositioned closer to the top of a page than another feature. Theseterms, however, should be construed broadly to include semiconductordevices having other orientations.

FIG. 1 illustrates cross-sectional diagrams 101 a and 101 b of anexemplary semiconductor device assembly. Diagram 101 a includes asemiconductor die 105 and a substrate 160 before they are attachedtogether to form the semiconductor device assembly. The semiconductordie 105 includes conductive pillars 115 formed on bond pads 110 of thesemiconductor die 105. The bond pads 110 may be connected to variousfunctional features of the semiconductor die 105. Further, solders 120are formed on the conductive pillars 115. The semiconductor die 105 is“flipped” in FIG. 1 such that an active surface of the semiconductor die105 faces the substrate 160, where the functional feature are formed onthe active surface. The conductive pillars 115 may include copper (Cu)and the solders 120 may include a tin-based alloy. The substrate 160includes conductive structures 165 that may be further connected toterminals (not shown) outside a protective covering of the semiconductordevice assembly. The conductive structures 165 may include copper.

Diagram 101 b depicts the semiconductor device assembly including thesemiconductor die 105 and the substrate 160 after they are attached toeach other via interconnects 170—e.g., the semiconductor die 105 isflip-chip bonded to the substrate 160. The interconnects 170 includesthe conductive pillars 115 connected to the conductive structures 165via IMCs 175. The IMCs 175 may form during an annealing step (e.g.,soldering process) performed after the solders 120 are brought incontact with the conductive structures 165 so as to facilitate bondingbetween the solders 120 and the conductive structures 165. In someexamples, the soldering process may reach to approximately 230-degreesCelsius to melt the solders 120. The IMCs 175 may include a metalliccompound comprising Cu (e.g., Cu of the conductive pillars 115 or theconductive structures 165, or both) and Sn (e.g., tin of the solders120).

Drawbacks associated with the IMCs 175 originate from electrical andmetallurgical characteristics of the IMCs 175. In some examples, theIMCs 175 may degrade electrical conductivity of interconnects 170 due toSn intermixing with Cu during the annealing step (which may be referredto as Sn consuming Cu). Additionally, the IMCs 175 may not be asmalleable as Cu (e.g., more brittle when compared to Cu) to result inweak spots in the interconnects 170 (e.g., interfaces between the IMCs175 and Cu of the conductive pillars 115 or the conductive structures165, or both), which tend to develop catastrophic failures (e.g., opensin the interconnects 170) during reliability tests or the lifetime ofsemiconductor device assembly. Further, the heating and coolingassociated with the annealing step may exacerbate additional reliabilityissues (e.g., cracks may form and propagate in a passivation layer ofthe semiconductor die 105) or cause warpages in the semiconductor die105, the substrate 160, or both. Such warpages may increase resistanceof the interconnect 170 or even lead to electrical discontinuitiesrendering the interconnects 170 non-functional.

FIGS. 2A through 2E illustrate a process of forming solderlessinterconnects for a semiconductor device assembly in accordance with anembodiment of the present technology. As described herein, thesolderless interconnects may be fabricated by using a low thermal-budgetelectroless plating process. The solderless interconnects can improveelectrical and metallurgical characteristics of interconnects byeliminating intermetallic compounds (e.g., IMCs 175) and associatedinterfaces (e.g., interfaces between Cu and IMCs). Further, forming thesolderless interconnects using the low thermal-budget electrolessplating process mitigates the additional reliability issues or thewarpage issues due to the lower thermal-budget associated with theelectroless plating process when compared to the soldering process.

FIG. 2A illustrates a cross-sectional diagram 201 a of a semiconductordie 205. The semiconductor die 205 includes bond pads 210 that areconnected to various functional features of the semiconductor die 205.The semiconductor die 205 may be covered with a first passivation layer215 that includes openings located above the bond pads 210. In someembodiments, the first passivation layer 215 may include a dielectricmaterial (e.g., oxi-nitride) formed on the semiconductor die 205, onwhich the openings are formed (e.g., using a photolithography processand an etching process) above the bond pads 210 to expose the bond pads210. Additionally or alternatively, the first passivation layer 215 mayinclude a solder resist including a dielectric material, on whichopenings are formed above the bond pads 210, in some embodiments.Further, the semiconductor die 205 includes first conductive pillars 220formed in contact with the bond pads 210. In some embodiments, the firstconductive pillars 220 include copper (Cu) as a primary component (or aprimary constituent). As such, the first conductive pillars 220 may bereferred to as Cu-pillars.

FIG. 2B illustrates a cross-sectional diagram 201 b of the semiconductordie 205 with adhesive members 225 attached to the semiconductor die 205.In some embodiments, the adhesive members 225 includes a die-attach-film(DAF). FIG. 2B also illustrates a plan-view diagram 201 c depictinglocations of the adhesive members 225 with respect to the semiconductordie 205. The adhesive members 225 are disposed to include spaces tofacilitate inflow or outflow of a solution as indicated in the diagram201 c. In some embodiments, the adhesive members 225 may attached to asubstrate (e.g., the substrate 260 described with reference to FIG. 2C)instead of the semiconductor die 205. Although the diagram 201 c depictsfour adhesive members (e.g., adhesive members 225 a through 225 d) witheach adhesive member 225 located at four corners of the semiconductordie 205, respectively, the present technology is not limited thereto.For example, additional adhesive members 225 may be disposed along anyside of the semiconductor die 205. In another example, the four adhesivemembers 225 may be located on four sides of the semiconductor die 205,i.e., one adhesive member 225 per one side of the semiconductor die 205.Further, the shape of adhesive members 225 may include other shapes thanthe square shape as depicted in the diagram 201, such as a rectangularor elongated-rectangular shape, a circular or an elliptic shape, or thelike.

FIG. 2C illustrates a cross-sectional diagram 201 d of the semiconductorassembly after the semiconductor die 205 is attached to a substrate 260through the adhesive members 225. The substrate 260 includes secondconductive pillars 270. In some embodiments, the second conductivepillars 270 may include copper (Cu) as a primary component (or a primaryconstituent). As such, the second conductive pillars 270 may be referredto as second Cu-pillars. In some embodiments, the second conductivepillars 270 may be referred to as conductive bumps. In some embodiments,organic solderability preservatives (OSP) may cover the secondconductive pillars 270 and/or other conductive features (e.g., Cutraces) of the substrate 260. In such embodiments, the OSP may beremoved before the semiconductor die 205 is attached to the substrate260. In some embodiments, the second conductive pillars 270 may beconnected to terminals outside of a protective covering (e.g., a casingof the semiconductor assembly including the semiconductor die 205 andthe substrate 260). In some embodiments, the substrate 260 may beanother semiconductor die similarly configured like the semiconductordie 205. In such embodiments, the second conductive pillars 270 may beconnected to second bond pads (not shown), which in turn, are connectedto functional features of the substrate 260. Further, the substrate 260includes a second passivation layer 265 that covers metallic features ofthe substrate 260 except the second conductive pillars 270. In someembodiments, the second passivation layer 265 may be an example of orinclude aspects of the first passivation layer 215.

As shown in FIG. 2C, individual first conductive pillars 220 may bealigned with corresponding individual second conductive pillars 270.Further, cross-sectional dimensions (e.g., diameters, cross-sectionalareas) of the first conductive pillars 220 and the second conductivepillars 270 are illustrated to be approximately identical. But thepresent technology is not limited thereto. For example, thecross-sectional dimensions of the first conductive pillars 220 may bedifferent from the cross-sectional dimensions of the second conductivepillars 270. The height (denoted as H in FIG. 2C) of the adhesivemembers 225 may be configured to leave a distance or a gap (denoted as Din FIG. 2C) between the first conductive pillars 220 and the secondconductive pillars 270 when the semiconductor die 205 is attached to thesubstrate 260—e.g., a first surface 221 of the first conductive pillar220 is separated from a second surface 271 of the second conductivepillar 270 by the distance D. In some embodiments, the height H may beapproximately 15 μm and the distance D may be approximately 10 μm.Further, the distance D may be determined based on a space (denoted as Sin FIG. 2C) between two adjacent first conductive pillars 220 (or secondconductive pillars 270). In some embodiments, the smallest space betweentwo adjacent first (or second) conductive pillars may be greater thanthe distance D. In some embodiments, the smallest space between twoconductive pillars may be approximately 25 μm.

FIG. 2D illustrates that the semiconductor assembly including thesemiconductor die 205 attached to the substrate 260 is placed (e.g.,immersed) in a solution 280. In some embodiments, the solution 280 mayinclude an electroless plating solution that forms a Cu-layer on ametallic surface exposed to the solution 280. In some embodiments, thesolution 280 may be injected into the gaps between the first conductivepillars 220 and the second conductive pillars 270 to form a Cu-layertherebetween. In some embodiments, the solution 280 may be heated tofacilitate the electroless plating process—e.g., to a temperature lessthan approximately 100-degrees Celsius.

FIG. 2E illustrates a cross-sectional diagram 201 e of the semiconductorassembly including the semiconductor die 205 attached to the substrate260 and the interconnects 275 formed between the semiconductor die 205and the substrate 260. FIG. 2E also illustrates various configurationsin the interconnects (e.g., interconnects 275 a through 275 d).

The interconnect 275 a illustrates the first conductive pillar 220ideally aligned to the second conductive pillar 270 when diameters ofthe first conductive pillar 220 and the second conductive pillar 270 areapproximately identical. The interconnect 275 a depicts that a firstsidewall surface of the first conductive pillar 220 is aligned withrespect to a corresponding second sidewall surface of the secondconductive pillar 270 without forming a step or a protrusion in theinterconnect 275 a. Further, the interconnect 275 a depicts the firstconductive pillar 220, the second conductive pillar 270, as well as athird conductive structure 285 depicted as a gray feature.

The third conductive structure 285 may include a conductive material(e.g., copper) that has been formed with the solution 280 during the lowthermal-budget electroless plating process. That is, the thirdconductive structure 285 includes the conductive material (e.g., copper)simultaneously plated on the first surface 221 and the second surface271 with the solution 280, which conjoins the first top surface 221 andthe second surface 271—i.e., the third conductive structure 285 connectsthe first surface 221 of the first conductive pillar 220 to the secondsurface 271 of the second conductive pillar 270. The dotted line betweenthe first conductive pillar 220 and the second conductive pillar 270depicts a mid-location within the gap (denoted as D) where two advancingCu-surfaces may join during the low thermal-budget electroless platingprocess—i.e., a first Cu-surface advancing from the first surface 221 ofthe first conductive pillar 220, a second Cu-surface advancing from thesecond surface 271 of the second conductive pillar 270. Further, thethird conductive structure 285 includes an intermediary portion locatedbetween the first conductive pillar 220 and the second conductive pillar270 (i.e., the intermediary portion of the conductive materialcorresponding to the diameters of the first conductive pillar 220 andthe second conductive pillar 270), and a peripheral portion surroundingsidewall surfaces of the first conductive pillar 220 and the secondconductive pillar 270 (i.e., the peripheral portion of the conductivematerial formed on the sidewall surfaces of the first and secondconductive pillars).

Interconnect 275 b illustrates the first conductive pillar 220misaligned with respect to the second conductive pillar 270 whendiameters of the first conductive pillar 220 and the second conductivepillar 270 are approximately identical. The interconnect 275 b depictsthat a first sidewall surface of the first conductive pillar 220 ismisaligned with respect to a corresponding second sidewall surface ofthe second conductive pillar 270, thereby forming a protrusion or a step290. A width of the ledge of step 290 may be approximately uniformaround the interconnect 275 b.

Interconnect 275 c illustrates the first conductive pillar 220 ideallyaligned with respect to the second conductive pillar 270 when diametersof the first conductive pillar 220 and the second conductive pillar 270are different. The interconnect 275 c depicts that a first sidewallsurface of the first conductive pillar 220 is misaligned with respect toa corresponding second sidewall surface of the second conductive pillar270, thereby forming a protrusion or a step 291. A width of the ledge ofstep 291 may be approximately uniform around the interconnect 275 c.

Interconnect 275 d illustrates the first conductive pillar 220misaligned with respect to the second conductive pillar 270 whendiameters of the first conductive pillar 220 and the second conductivepillar 270 are different. The interconnect 275 d depicts that a firstsidewall surface of the first conductive pillar 220 is misaligned withrespect to a corresponding second sidewall surface of the secondconductive pillar 270, thereby forming a protrusion or a step 292. Awidth of the ledge of step 292 may be varying around the interconnect275 d.

In some embodiments, a semiconductor device assembly may include a firstmetal structure extending from a first side of a semiconductor die, asecond metal structure extending from a first side of a substrate thatfaces the first side of the semiconductor die, and a third metalstructure conjoining the first metal structure and the second metalstructure, where the third metal structure is formed with an electrolessplating solution injected between the first metal structure and thesecond metal structure. Further, the first, second, and third metalstructures may include a common primary metallic component (orconstituent). In some embodiments, the common primary metallic componentincludes copper. In some embodiments, a first sidewall surface of thefirst metal structure is misaligned with respect to a correspondingsecond sidewall surface of the second metal structure. The semiconductordevice assembly may further include one or more adhesive membersconfigured to attach the semiconductor die to the substrate and tofacilitate inflow or outflow of the electroless plating solution. Insome embodiments, a thickness of the one or more adhesive memberscorrelates to a sum of a first height of the first metal structure, asecond height of the second metal structure, and a thickness of thethird metal structure, respectively in a perpendicular direction withrespect to either the first side of the semiconductor die or thesubstrate.

FIG. 3A illustrates a cross-sectional diagram 301 a including thesemiconductor die 205 and the substrate 260, where the semiconductor die205 is brought proximate to the substrate 260. The individual firstconductive pillars 220 are aligned with respect to the individual secondconductive pillars 270, where the first surfaces 221 of the firstconductive pillars 220 face the second surface 271 of the secondconductive pillars 270. Further, the first surfaces 221 of the firstconductive pillars 220 are separated from the second surface 271 of thesecond conductive pillars 270 by the distance D. In this regard, thediagram 301 a corresponds to the diagram 201 d described with referenceto FIG. 2C, except that support components 295 are added in lieu of theadhesive members 225 that has been omitted. That is, the semiconductordie 205 may be supported by a first support component 295 a while thesubstrate 260 may be supported by a second support component 295 b.

Such support components may be configured to hold an object (e.g., thesemiconductor die 205, the substrate 260) via vacuum suction orelectrostatic suction (or other suitable support mechanisms). In thismanner, the semiconductor die 205 and the substrate 260 may be arrangedas shown in the diagram 301 a by manipulating the first and secondsupport components 295 without the adhesive members 225. Moreover, thesemiconductor die 205 and the substrate 260, while supported by thefirst and second support components 295, respectively, may be immersedin the solution 280 (e.g., the electroless plating solution) to conjointhe first surfaces 221 and the second surfaces 271 by simultaneouslyplating a conductive material (e.g., copper) on both the first surfaces221 and the second surfaces 271 with the electroless platingsolution—i.e., connecting the first conductive pillars 220 to thecorresponding second conductive pillars 270. In some cases, the solution280 may be injected into the gaps between the first conductive pillars220 and the second conductive pillars 270 to form a Cu-layertherebetween as described with reference to FIG. 2D. Lack of theadhesive members 225 may facilitate a relatively easier inflow and/oroutflow of the electroless plating solution between the first surfaces221 and the second surfaces 271 when compared to the embodiment usingthe adhesive members 225.

FIG. 3B illustrates a cross-sectional diagram 301 b of the semiconductorassembly including the semiconductor die 205 attached to the substrate260 and the interconnects 275 formed between the semiconductor die 205and the substrate 260. The support components 295 may be removed fromthe semiconductor die 205 and the substrate 260 after the semiconductordie 205 is attached to the substrate 260 through the interconnects 275.In this regard, the diagram 301 b corresponds to the diagram 201 edescribed with reference to FIG. 2E, except the adhesive members 225that has been omitted. Further, the interconnects 275 of the diagram 301may include the various configurations in interconnects (e.g.,interconnects 275 a through 275 d depicted in FIG. 2E) as described withreference to FIG. 2E.

Although the processes of forming solderless interconnects withreference to FIGS. 2A through 2E, 3A, and 3B illustrate a die levelprocess steps—e.g., a singulated semiconductor die (e.g., thesemiconductor die 205) attached to a singulated substrate (e.g., thesubstrate 260), the processes may be applied to wafer level processsteps. In some embodiments, a semiconductor wafer may include a firstsemiconductor die including a first plurality of copper-pillars and asecond semiconductor die including a second plurality of copper-pillars.The semiconductor wafer may be brought proximate to a package supportsubstrate including a first group of conductive bumps and a second groupof conductive bumps such that individual copper-pillars of the first andsecond pluralities are aligned with respect to individual conductivebumps of the first and second groups. In some embodiments, theconductive bumps of the first and second groups may include copper as aprimary component.

Further, the first and second pluralities of copper-pillars face thefirst and second groups of conductive bumps, and the first and secondpluralities of copper-pillars are separated from the first and secondgroups of conductive bumps by a distance (e.g., the distance D asdescribed with reference to FIG. 2C or FIG. 3A). Subsequently,individual copper-pillars of the first and second pluralities may beconnected to individual conductive bumps of the first and second groupsvia conductive materials (e.g., copper) formed in an electroless platingsolution injected between the first and second pluralities ofcopper-pillars and the first and second groups of conductive bumps.

In some embodiments, bringing the semiconductor wafer proximate to thepackage support substrate may further include bonding the semiconductorwafer to the package support substrate using one or more adhesivemembers before connecting the individual copper-pillars of the first andsecond pluralities to the individual conductive bumps of the first andsecond groups. In such embodiments, a thickness of the one or moreadhesive members may be configured to maintain the distance (e.g., thedistance D as described with reference to FIG. 2C) between first topsurfaces of the copper-pillars of the first and second pluralities andsecond top surfaces of the conductive bumps of the first and secondgroups after bonding the semiconductor wafer to the package supportsubstrate. In some embodiments, the distance may be less than a lateraldistance between the copper-pillars of the first plurality or the secondpluralities.

In some embodiments, bringing the semiconductor wafer proximate to thepackage support substrate may further include supporting thesemiconductor wafer and the package support substrate using supportcomponents, respectively (e.g., the support components 295 describedwith reference to FIGS. 3A and 3B) before connecting the individualcopper-pillars of the first and second pluralities to the individualconductive bumps of the first and second groups. In such embodiments,the support components may be manipulated to maintain the distance(e.g., the distance D as described with reference to FIG. 3A) betweenfirst top surfaces of the copper-pillars of the first and secondpluralities and second top surfaces of the conductive bumps of the firstand second groups. In some embodiments, the distance may be less than alateral distance between the copper-pillars of the first plurality orthe second pluralities.

Further, after the individual copper-pillars of the first and secondpluralities are connected to the individual conductive bumps of thefirst and second groups, the semiconductor wafer may be singulated alonga dicing lane between the first and second semiconductor dies. Also, thepackage support substrate may be singulated concurrently along thedicing lane while singulating the semiconductor wafer, where the dicinglane is between the first and second groups of conductive bumps.

Any one of the semiconductor device assemblies described above withreference to FIG. 2 can be incorporated into any of a myriad of largerand/or more complex systems, a representative example of which is thesystem 470 shown schematically in FIG. 4. The system 470 can include asemiconductor device assembly 400, a power source 472, a driver 474, aprocessor 476, and/or other subsystems or components 478. Thesemiconductor device assembly 400 can include features generally similarto those of the solderless interconnects described herein, and cantherefore include various features that enhance electrical andmetallurgical characteristics of the interconnects. The resulting system470 can perform any of a wide variety of functions, such as memorystorage, data processing, and/or other suitable functions. Accordingly,representative systems 470 can include, without limitation, hand-helddevices (e.g., mobile phones, tablets, digital readers, and digitalaudio players), computers, and appliances. Components of the system 470may be housed in a single unit or distributed over multiple,interconnected units (e.g., through a communications network). Thecomponents of the system 470 can also include remote devices and any ofa wide variety of computer readable media.

FIG. 5 is a flowchart 500 illustrating a method of forming solderlessinterconnects for a semiconductor device assembly in accordance with anembodiment of the present technology. The flowchart 500 may includeaspects of methods as described with reference to FIGS. 2A through 2E,3A, and 3B.

The method includes forming a first metal structure on a semiconductordie, the first metal structure including a first top surface away fromthe semiconductor die (box 510). The method further includes forming asecond metal structure on a substrate, the second metal structureincluding a second top surface away from the substrate (box 515). Themethod further includes aligning the first metal structure with thesecond metal structure such that the first top surface faces the secondtop surface (box 520). The method further includes conjoining the firsttop surface and the second top surface by simultaneously plating aconductive material on both the first top surface and the second topsurface with an electroless plating solution (box 525).

In some embodiments, the method may further include injecting theelectroless plating solution between the first top surface and thesecond top surface, wherein plating the conductive material is based atleast in part on injecting the electroless plating solution. In someembodiments, the method may further include heating the electrolessplating solution injected between the first top surface and the secondtop surface, wherein plating the conductive material is based at leastin part on heating the electroless plating solution. In someembodiments, the method may further include attaching one or moreadhesive members to the semiconductor die, prior to aligning the firstmetal structure with the second metal structure. In some embodiments,the one or more adhesive members are configured to facilitate inflow oroutflow of the electroless plating solution.

In some embodiments, the method may further include bonding, beforeforming the conductive material, the semiconductor die to the substrateusing one or more adhesive members. In some embodiments, a thickness ofthe one or more adhesive members may be configured to provide aseparation between the first top surface and the second top surfaceafter bonding the semiconductor die to the substrate, the separationless than a lateral distance between the first metal structure and athird metal structure on the semiconductor die that is adjacent to thefirst metal structure. In some embodiments, the first metal structure,the second metal structure, and the conductive material include copperas a primary component (or constituent), respectively.

In some embodiments, the substrate includes a package support substrateor a second semiconductor die. In some embodiments, the method mayfurther include bringing the semiconductor die to the substrate suchthat the first metal structure that has been aligned to the second metalstructure is separated by a gap between the first top surface and thesecond top surface, where the gap is less than a lateral distancebetween the first metal structure and a third metal structure on thesemiconductor die that is adjacent to the first metal structure.

FIG. 6 is a flowchart 600 illustrating a method of forming solderlessinterconnects for a semiconductor device assembly in accordance with anembodiment of the present technology. The flowchart 600 may includeaspects of methods as described with reference to FIGS. 2A through 2E,3A, and 3B.

The method includes forming a first plurality of copper-pillars on afirst semiconductor die and a second plurality of copper-pillars on asecond semiconductor die, where a semiconductor wafer includes the firstand second semiconductor dies (box 610). The method further includesforming a first group of conductive bumps and a second group ofconductive bumps on a package support substrate (box 615). The methodfurther includes aligning individual copper-pillars of the first andsecond pluralities with individual conductive bumps of the first andsecond groups, where the first and second pluralities of copper-pillarsface the first and second groups of conductive bumps (box 620). Themethod further includes connecting individual copper-pillars of thefirst and second pluralities to individual conductive bumps of the firstand second groups via conductive material formed in an electrolessplating solution injected between the first and second pluralities ofcopper-pillars and the first and second groups of conductive bumps (box625).

In some embodiments, the method may further include bonding thesemiconductor wafer to the package support substrate using one or moreadhesive members, before connecting the individual copper-pillars of thefirst and second pluralities to the individual conductive bumps of thefirst and second groups. In some embodiments, a thickness of the one ormore adhesive members may be configured to provide a separation betweenfirst top surfaces of the copper-pillars of the first and secondpluralities and second top surfaces of the conductive bumps of the firstand second groups after bonding the semiconductor wafer to the packagesupport substrate, the separation less than a lateral distance betweenthe copper-pillars of the first plurality or the second pluralities.

In some embodiments, the method may further include singulating thesemiconductor wafer along a dicing lane between the first and secondsemiconductor dies, after connecting individual copper-pillars of thefirst and second pluralities to individual conductive bumps of the firstand second groups. In some embodiments, the method may further includeconcurrently singulating the package support substrate along the dicinglane while singulating the semiconductor wafer, wherein the dicing laneis between the first and second groups of conductive bumps.

It should be noted that the methods described above describe possibleimplementations, and that the operations and the steps may be rearrangedor otherwise modified and that other implementations are possible.Furthermore, embodiments from two or more of the methods may becombined.

From the foregoing, it will be appreciated that specific embodiments ofthe technology have been described herein for purposes of illustration,but that various modifications may be made without deviating from thedisclosure. For example, although the embodiments of the semiconductordevice assemblies are described with respect to a single semiconductordie attached to a substrate, other embodiments of the semiconductordevice assemblies can be configured, for example, to include more thanone semiconductor die, such as stacked semiconductor dies, hybrid memorycubes (HMCs), or the like. In addition, while in the illustratedembodiments certain features or components have been shown as havingcertain arrangements or configurations, other arrangements andconfigurations are possible. For example, the first conductive pillars220 and the second conductive pillars 270 can include a larger orsmaller number of conductive pillars than shown in the illustratedembodiments. In addition, certain aspects of the present technologydescribed in the context of particular embodiments may also be combinedor eliminated in other embodiments.

The devices discussed herein, including a semiconductor device, may beformed on a semiconductor substrate or die, such as silicon, germanium,silicon-germanium alloy, gallium arsenide, gallium nitride, etc. In somecases, the substrate is a semiconductor wafer. In other cases, thesubstrate may be a silicon-on-insulator (SOI) substrate, such assilicon-on-glass (SOG) or silicon-on-sapphire (SOP), or epitaxial layersof semiconductor materials on another substrate. The conductivity of thesubstrate, or sub-regions of the substrate, may be controlled throughdoping using various chemical species including, but not limited to,phosphorous, boron, or arsenic. Doping may be performed during theinitial formation or growth of the substrate, by ion-implantation, or byany other doping means.

As used herein, including in the claims, “or” as used in a list of items(for example, a list of items prefaced by a phrase such as “at least oneof” or “one or more of”) indicates an inclusive list such that, forexample, a list of at least one of A, B, or C means A or B or C or AB orAC or BC or ABC (i.e., A and B and C). Also, as used herein, the phrase“based on” shall not be construed as a reference to a closed set ofconditions. For example, an exemplary step that is described as “basedon condition A” may be based on both a condition A and a condition Bwithout departing from the scope of the present disclosure. In otherwords, as used herein, the phrase “based on” shall be construed in thesame manner as the phrase “based at least in part on.”

From the foregoing, it will be appreciated that specific embodiments ofthe invention have been described herein for purposes of illustration,but that various modifications may be made without deviating from thescope of the invention. Rather, in the foregoing description, numerousspecific details are discussed to provide a thorough and enablingdescription for embodiments of the present technology. One skilled inthe relevant art, however, will recognize that the disclosure can bepracticed without one or more of the specific details. In otherinstances, well-known structures or operations often associated withmemory systems and devices are not shown, or are not described indetail, to avoid obscuring other aspects of the technology. In general,it should be understood that various other devices, systems, and methodsin addition to those specific embodiments disclosed herein may be withinthe scope of the present technology.

What is claimed is:
 1. A method comprising: forming a first metalstructure on a first side of a semiconductor die, the first metalstructure including a first top surface away from the semiconductor die;forming a second metal structure on a first side of a substrate, thesecond metal structure including a second top surface away from thesubstrate; attaching a first support component to a second side of thesemiconductor die opposite to the first side of the semiconductor die;attaching a second support component to a second side of the substrateopposite to the first side of the substrate; manipulating the first andsecond support components such that the first metal structure is alignedwith the second metal structure and the first top surface faces thesecond top surface; and conjoining the first top surface and the secondtop surface by simultaneously plating a conductive material on both thefirst top surface and the second top surface with an electroless platingsolution.
 2. The method of claim 1, further comprising: injecting theelectroless plating solution between the first top surface and thesecond top surface, wherein plating the conductive material is based atleast in part on injecting the electroless plating solution.
 3. Themethod of claim 1, further comprising: heating the electroless platingsolution, wherein plating the conductive material is based at least inpart on heating the electroless plating solution.
 4. The method of claim1, wherein the first metal structure, the second metal structure, andthe conductive material include copper as a primary component,respectively.
 5. The method of claim 1, wherein the substrate includes apackage support substrate or a second semiconductor die.
 6. The methodof claim 1, wherein manipulating the first and second support componentsfurther comprises: bringing the semiconductor die to the substrate suchthat the first metal structure is separated by a gap between the firsttop surface and the second top surface, wherein the gap is less than alateral distance between the first metal structure and a third metalstructure on the semiconductor die that is adjacent to the first metalstructure.
 7. The method of claim 1, further comprising: immersing thesemiconductor die and the substrate in the electroless plating solution,while supported by the first and second support members, whereinconjoining the first top surface and the second top surface is based atleast in part on immersing the semiconductor die and the substrate inthe electroless plating solution.
 8. The method of claim 1, wherein thefirst and second support components are configured to provide vacuumsuction or electrostatic suction to hold the semiconductor die and thesubstrate, respectively.
 9. A method comprising: forming a firstplurality of copper-pillars on a first semiconductor die and a secondplurality of copper-pillars on a second semiconductor die, wherein asemiconductor wafer includes the first and second semiconductor dies,and wherein the semiconductor wafer has a first side on which the firstand second pluralities of copper-pillars are disposed; forming a firstgroup of conductive bumps and a second group of conductive bumps on apackage support substrate, wherein the package support substrate has afirst side on which the first and second groups of conductive bumps aredisposed; attaching a first support component to a second side of thesemiconductor wafer opposite to the first side of the semiconductorwafer; attaching a second support component to a second side of thepackage support substrate opposite to the first side of the packagesupport substrate; manipulating the first and second support componentssuch that individual copper-pillars of the first and second pluralitiesare aligned with individual conductive bumps of the first and secondgroups, wherein the first and second pluralities of copper-pillars facethe first and second groups of conductive bumps; and connectingindividual copper-pillars of the first and second pluralities toindividual conductive bumps of the first and second groups viaconductive material formed in an electroless plating solution.
 10. Themethod of claim 9, wherein manipulating the first and second supportcomponents provides a separation between first top surfaces of thecopper-pillars of the first and second pluralities and second topsurfaces of the conductive bumps of the first and second groups, theseparation less than a lateral distance between the copper-pillars ofthe first plurality or the second plurality.
 11. The method of claim 9,further comprising: singulating the semiconductor wafer along a dicinglane between the first and second semiconductor dies, after connectingindividual copper-pillars of the first and second pluralities toindividual conductive bumps of the first and second groups.
 12. Themethod of claim 11, further comprising: concurrently singulating thepackage support substrate along the dicing lane while singulating thesemiconductor wafer, wherein the dicing lane is between the first andsecond groups of conductive bumps.
 13. The method of claim 9, furthercomprising: immersing the semiconductor wafer and the package supportsubstrate in the electroless plating solution, while supported by thefirst and second support members, wherein connecting the individualcopper-pillars of the first and second pluralities to the individualconductive bumps of the first and second groups is based at least inpart on immersing the semiconductor wafer and the package supportsubstrate in the electroless plating solution.
 14. The method of claim9, wherein the first and second support components are configured toprovide vacuum suction or electrostatic suction to hold thesemiconductor wafer and the package support substrate, respectively. 15.The method of claim 9, further comprising: heating the electrolessplating solution, wherein forming the conductive material is based atleast in part on heating the electroless plating solution.
 16. Asemiconductor device assembly, comprising: a plurality of first metalstructures extending from a first side of a semiconductor die; aplurality of second metal structures extending from a first side of asubstrate that faces the first side of the semiconductor die; and aplurality of third metal structures conjoining individual first metalstructures with corresponding second metal structures, wherein the thirdmetal structures are formed with an electroless plating solution,wherein: the first, second, and third metal structures include copper asa common primary metallic component; the third metal structures at leastpartially surround sidewall surfaces of the first metal structures andare in contact with the sidewall surfaces; and the first, second, andthird metal structures form a plurality of interconnects, wherein aregion between the semiconductor die and the substrate is absent anystructures apart from the plurality of interconnects.
 17. Thesemiconductor device assembly of claim 16, wherein the first sidewallsurfaces of the first metal structures are misaligned with respect tocorresponding second sidewall surfaces of the second metal structures.18. The semiconductor device assembly of claim 16, wherein: the firstmetal structures have a first diameter; and the second metal structureshave a second diameter different from the first diameter.